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High mobility organic semiconductors for field-effect transistors
Alternative Title用于场效应晶体管的高迁移率有机半导体
Gao XK(高希珂); Zhao Z(赵征)
2015
Source PublicationSci. China-Chem.
Volume58Issue:6Pages:947-968
AbstractOrganic field-effect transistors (OFETs) are attracting more and more attention due to their potential applications in low-cost, large-area and flexible electronic products. Organic semiconductors (OSCs) are the key components of OFETs and basically determine the device performance. The past five years have witnessed great progress of OSCs. OSCs used for OFETs have made rapid progress, with field-effect mobility much larger than that of amorphous silicon (0.5-1.0 cm(2)/(V s)) and of up to 10 cm(2)/(V s) or even higher. In this review, we demonstrate the latest progress of OSCs for OFETs, where more than 50 representative OSCs are highlighted and analyzed to give some valuable insights for this important but challenging field.
Subtype论文
Subject Area高分子化学
DOI10.1007/s11426-015-5399-5
URL查看原文
Indexed BySCI
Language英语
WOS IDWOS:000355266100006
Citation statistics
Cited Times:69[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sioc.ac.cn/handle/331003/39844
Collection高分子材料研究室
Corresponding AuthorGao XK(高希珂)
Affiliation中科院上海有机化学研究所, 有机功能分子合成与组装化学重点实验室
Recommended Citation
GB/T 7714
Gao XK,Zhao Z. High mobility organic semiconductors for field-effect transistors[J]. Sci. China-Chem.,2015,58(6):947-968.
APA 高希珂,&赵征.(2015).High mobility organic semiconductors for field-effect transistors.Sci. China-Chem.,58(6),947-968.
MLA 高希珂,et al."High mobility organic semiconductors for field-effect transistors".Sci. China-Chem. 58.6(2015):947-968.
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