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学科主题: 高分子化学
题名: Propargyl ether-functionalized poly(m-phenylene): a new precursor for the preparation of polymers with high modulus and high T-g
其他题名: 苯炔醚功能化的聚间苯: 一种全新的制备高模量高Tg聚合物的前驱体
作者: Luo YJ(罗乙杰)1; Sun J(孙晶)1; Jin KK(金凯凯)1; Wang JJ(王佳佳)1; Huang GS(黄光速)1; Fang Q(房强)1
通讯作者: 孙晶 ; 房强
刊名: RSC Adv.
发表日期: 2015
DOI: 10.1039/c5ra01515d
卷: 5, 期:29, 页:23009-23014
收录类别: SCI
文章类型: 论文
英文摘要: A propargyl ether-functionalized poly(m-phenylene) (PE-PMP) is reported here. This polymer exhibits good solubility and film-forming ability. After postpolymerization at high temperature, the polymer transforms to a cross-linked network, which shows high thermostability with a 5% weight loss temperature at 471 degrees C and a char yield of 67% at 1000 degrees C under N-2. Thermo-mechanical analysis (TMA) reveals that the cured polymer shows an average linear coefficient of thermal expansion (CTE) of 30.6 ppm degrees C-1 ranging from 30 to 300 degrees C and a glass transition temperature (T-g) near 330 degrees C. Moreover, even at temperatures up to 300 degrees C, the cured polymer possesses a storage modulus exceeding 4.0 GPa. These data are superior to those of the commercial epoxy and novolac resins and polyimides. Furthermore, the cured polymer film has good mechanical properties with hardness, Young's modulus and a bonding strength to a silicon wafer of 1.22, 9.44 and 0.78 GPa, respectively. The cured polymer film also shows good dielectric properties with an average dielectric constant of 2.93 in a range of frequencies from 2 MHz to 30 MHz. Such results suggest that the polymer is a useful precursor for preparation of insulating materials with high modulus and Tg in the microelectronics industry.
语种: 英语
相关网址: 查看原文
WOS记录号: WOS:000350643700086
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内容类型: 期刊论文
URI标识: http://ir.sioc.ac.cn/handle/331003/39840
Appears in Collections:高分子材料研究室_期刊论文

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作者单位: 1.中科院上海有机化学研究所, 有机功能分子合成与组装化学重点实验室
2.四川大学

Recommended Citation:
Luo YJ,Sun J,Jin KK,et al. Propargyl ether-functionalized poly(m-phenylene): a new precursor for the preparation of polymers with high modulus and high T-g[J]. RSC Adv.,2015,5(29):23009-23014.
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