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A perfluorohexyl containing diketopyrrolopyrrole (DPP) small molecule for high performance ambipolar transistors with balanced hole and electron mobilites
其他题名A perfluorohexyl containing diketopyrrolopyrrole (DPP) small molecule for high performance ambipolar transistors with balanced hole and electron mobilites
WANG YUANYUAN1; HUANG QIULIU1; LIU ZHIQIANG1; Li HX(李洪祥)1
2014
发表期刊RSC Adv.
卷号4期号:56页码:29509-29513
摘要Two novel diketopyrrolopyrrole (DPP) small molecules DPPTT-F and DPPTT-H were synthesized. With the change of substituent from hexyl to perfluorohexyl, the HOMO and LUMO energy levels of DPPTT-F lowered, but the bandgap of DPPTT-H and DPPTT-F was nearly the same, which was proved by absorption spectra and electrochemistry. Thin film transistor characteristics showed DPPTT-H exhibited p-channel behavior with a hole mobility of about 0.2 cm(2) V-1 s(-1), while DPPTT-F displayed ambipolar characteristics with balanced hole and electron mobility in air. The mobility of DPPTT-F was 0.012 cm(2) V-1 s(-1) for holes and 0.011 cm(2) V-1 s(-1) for electrons. The microstructure and morphology of the thin films were also investigated. All these results demonstrated the unique property of perfluoroalkyl chains and their potential application in high performance organic ambipolar semiconductors.
学科领域高分子化学
DOI10.1039/c4ra02967d
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收录类别SCI
语种英语
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文献类型期刊论文
条目标识符http://ir.sioc.ac.cn/handle/331003/38897
专题高分子材料研究室
通讯作者Li HX(李洪祥)
作者单位1.中科院上海有机化学研究所
2.山东大学
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WANG YUANYUAN,HUANG QIULIU,LIU ZHIQIANG,et al. A perfluorohexyl containing diketopyrrolopyrrole (DPP) small molecule for high performance ambipolar transistors with balanced hole and electron mobilites[J]. RSC Adv.,2014,4(56):29509-29513.
APA WANG YUANYUAN,HUANG QIULIU,LIU ZHIQIANG,&李洪祥.(2014).A perfluorohexyl containing diketopyrrolopyrrole (DPP) small molecule for high performance ambipolar transistors with balanced hole and electron mobilites.RSC Adv.,4(56),29509-29513.
MLA WANG YUANYUAN,et al."A perfluorohexyl containing diketopyrrolopyrrole (DPP) small molecule for high performance ambipolar transistors with balanced hole and electron mobilites".RSC Adv. 4.56(2014):29509-29513.
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