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High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid
Alternative TitleHigh-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid
WU QINGHE; QIAO XIAOLAN; HUANG QIULIU; LI JIE; XIONG YU; Gao XK(高希珂); Li HX(李洪祥)
2014
Source PublicationRSC Adv.
Volume4Issue:33Pages:16939-16943
AbstractA solution-processable tetrathienoquinoidal semiconductor CMHT was synthesized and characterized. Single crystal diffraction results showed that CMHT adopted slipped p-p stacking in the crystal structure. Multiple intermolecular interactions, such as S center dot center dot center dot N and S center dot center dot center dot C (where C is the carbon on the cyano group), existed among neighboring molecules, which formed a 2-dimensional charge transport network. Solution-processed thin film transistors of CMHT displayed a high electron mobility of up to 0.22 cm(2) V-1 s(-1) under ambient conditions, one of the highest electron mobilities for quinoidal semiconductors. The correlation between the molecular packing of the CMHT and transistor performance was studied by AFM and XRD.
Subject Area高分子化学
DOI10.1039/c3ra47095d
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Indexed BySCI
Language英语
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Document Type期刊论文
Identifierhttp://ir.sioc.ac.cn/handle/331003/38891
Collection高分子材料研究室
Corresponding AuthorLi HX(李洪祥)
Affiliation中科院上海有机化学研究所
Recommended Citation
GB/T 7714
WU QINGHE,QIAO XIAOLAN,HUANG QIULIU,et al. High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid[J]. RSC Adv.,2014,4(33):16939-16943.
APA WU QINGHE.,QIAO XIAOLAN.,HUANG QIULIU.,LI JIE.,XIONG YU.,...&李洪祥.(2014).High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid.RSC Adv.,4(33),16939-16943.
MLA WU QINGHE,et al."High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid".RSC Adv. 4.33(2014):16939-16943.
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