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学科主题: 高分子化学
题名: Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors
其他题名: Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors
作者: Ren SD(任申冬) ; Li RJ(李荣金) ; Meng XJ(孟祥建) ; Li HX(李洪祥)
通讯作者: 李洪祥
刊名: J. Mater. Chem.
发表日期: 2012-01-01
卷: 22, 期:13, 页:6171-6175
收录类别: SCI
部门归属: 中科院上海有机化学研究所; 中科院上海技术物理研究所
英文摘要: A new method to prepare reduced graphene oxide (RGO) films was reported. In this method, RGO thin films can be prepared for large areas with controllable thickness and high temperature (>500 degrees C) is not required. The applications of RGO thin films as electrodes of organic field-effect transistors (OFETs) were investigated by bottom-contact p- and n-channel OFETs using copper phthalocyanine and copper hexadecafluorophthalocyanine as semiconductors. Transistor characterization showed the RGO electrode devices displayed higher mobilities than similar OFETs with Au electrodes, suggesting RGO is a good candidate for OFET electrodes.
语种: 英语
相关网址: 查看原文
WOS记录号: WOS:000301195300039
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内容类型: 期刊论文
URI标识: http://ir.sioc.ac.cn/handle/331003/28425
Appears in Collections:高分子材料研究室_期刊论文

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Recommended Citation:
Ren SD,Li RJ,Meng XJ,et al. Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors[J]. J. Mater. Chem.,2012,22(13):6171-6175.
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