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Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors
其他题名Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors
Ren SD(任申冬); Li RJ(李荣金); Meng XJ(孟祥建); Li HX(李洪祥)
2012
发表期刊J. Mater. Chem.
ISSN0959-9428
卷号22期号:13页码:6171-6175
摘要A new method to prepare reduced graphene oxide (RGO) films was reported. In this method, RGO thin films can be prepared for large areas with controllable thickness and high temperature (>500 degrees C) is not required. The applications of RGO thin films as electrodes of organic field-effect transistors (OFETs) were investigated by bottom-contact p- and n-channel OFETs using copper phthalocyanine and copper hexadecafluorophthalocyanine as semiconductors. Transistor characterization showed the RGO electrode devices displayed higher mobilities than similar OFETs with Au electrodes, suggesting RGO is a good candidate for OFET electrodes.
学科领域高分子化学
部门归属中科院上海有机化学研究所; 中科院上海技术物理研究所
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收录类别SCI
语种英语
WOS记录号WOS:000301195300039
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sioc.ac.cn/handle/331003/28425
专题高分子材料研究室
通讯作者Li HX(李洪祥)
推荐引用方式
GB/T 7714
Ren SD,Li RJ,Meng XJ,et al. Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors[J]. J. Mater. Chem.,2012,22(13):6171-6175.
APA 任申冬,李荣金,孟祥建,&李洪祥.(2012).Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors.J. Mater. Chem.,22(13),6171-6175.
MLA 任申冬,et al."Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors".J. Mater. Chem. 22.13(2012):6171-6175.
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