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学科主题: 高分子化学
题名: Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors
其他题名: 硫杂环稠合、拉电子基团封端的核扩展的萘二酰亚胺衍生物可用于制备空气稳定、可溶液加工的n-型有机薄膜晶体管
作者: Hu YB(胡云宾) ; Gao XK(高希珂) ; Di ZA(狄重安) ; Yang XD(杨笑迪) ; Zhang F(张峰) ; Liu YQ(刘云圻) ; Li HX(李洪祥) ; Zhu DB(朱道本)
通讯作者: 高希珂 ; 狄重安 ; 朱道本
刊名: Chem. Mat.
发表日期: 2011
卷: 23, 期:5, 页:1204-1215
收录类别: SCI
部门归属: 中科院上海有机化学研究所; 中科院化学研究所; 复旦大学
英文摘要: Four families of core-expanded naphthalene diiinide (NDI) derivatives were designed and synthesized, namely, NDI-DTYM2 (1-7, of which 1 and 2 were previously reported), NDI-DTDCN2 (8 and 9), NDI-DTYCA2 (10 and 11), and NDI-DCT2 (12), where the NDI core fuses two 2-(1,3-dithiol-2-ylidene)malonitrile (DTYM) groups, two 1,4-dithiine-2,3-dicarbonitrile (DTDCN) groups, two alkyl 2-(1,3-dithiol-2-ylidene)cyanoacetate (DTYCA) groups, and two 2,3-dicyanothiophenes (DCT), respectively. The NDI cores of the present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organic thin film transistors based on compounds 3-12 operate well in air with the electron mobility ranging from similar to 10(-6) to 0.26 cm(2) V-1 s(-1), depending on the nature of the branched N-alkyl substituent and the pi-backbone structure. new
语种: 英语
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WOS记录号: WOS:000287767200019
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内容类型: 期刊论文
URI标识: http://ir.sioc.ac.cn/handle/331003/28385
Appears in Collections:高分子材料研究室_期刊论文

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Recommended Citation:
Hu YB,Gao XK,Di ZA,et al. Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors[J]. Chem. Mat.,2011,23(5):1204-1215.
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