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学科主题: 高分子化学
题名: Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors
其他题名: Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors
作者: Wang CL(王成亮) ; WEI ZHONGMING ; Meng Q(孟青) ; Zhao HP(赵华平) ; XU WEI ; Li HX(李洪祥) ; Hu WP(胡文平)
通讯作者: 李洪祥 ; 胡文平
刊名: Org. Electron.
发表日期: 2010
卷: 11, 期:4, 页:544-551
收录类别: SCI
部门归属: 中国科学院化学研究所; 中国科学院上海有机化学研究所; 中国科学院研究生院
英文摘要: Dibenzo[b,d]thiophene (DBT) based oligomers with carbon-carbon double and triple bonds were synthesized. Their thermal stability and energy levels were studied by thermal analyses, UV-vis absorption spectra and electrochemistry. Single crystals of 3,7-bis(phenylethynyl)dibenzo[b,d]thiophene (BEDBT) revealed the introduction of unsaturated bonds eliminated the steric repulsion between adjacent aromatic rings and BEDBT displayed planar structure in crystals. Thin film transistors of these compounds displayed typical p-type behaviour. The best performance was obtained from 3,7-distyryldibenzo[b,d]thiophene (DSDBT) on OTS modified substrates with mobility as high as 0.15 cm(2)/Vs and on/off current ratio up to 108, one of the highest performance for DBT based oligomers. (C) 2009 Elsevier B. V. All rights reserved.
语种: 英语
相关网址: 查看原文
WOS记录号: WOS:000275793300007
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内容类型: 期刊论文
URI标识: http://ir.sioc.ac.cn/handle/331003/28375
Appears in Collections:高分子材料研究室_期刊论文

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Recommended Citation:
Wang CL,WEI ZHONGMING,Meng Q,et al. Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors[J]. Org. Electron.,2010,11(4):544-551.
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