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Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors
其他题名Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors
Wang CL(王成亮); WEI ZHONGMING; Meng Q(孟青); Zhao HP(赵华平); XU WEI; Li HX(李洪祥); Hu WP(胡文平)
2010
发表期刊Org. Electron.
ISSN1566-1199
卷号11期号:4页码:544-551
摘要Dibenzo[b,d]thiophene (DBT) based oligomers with carbon-carbon double and triple bonds were synthesized. Their thermal stability and energy levels were studied by thermal analyses, UV-vis absorption spectra and electrochemistry. Single crystals of 3,7-bis(phenylethynyl)dibenzo[b,d]thiophene (BEDBT) revealed the introduction of unsaturated bonds eliminated the steric repulsion between adjacent aromatic rings and BEDBT displayed planar structure in crystals. Thin film transistors of these compounds displayed typical p-type behaviour. The best performance was obtained from 3,7-distyryldibenzo[b,d]thiophene (DSDBT) on OTS modified substrates with mobility as high as 0.15 cm(2)/Vs and on/off current ratio up to 108, one of the highest performance for DBT based oligomers. (C) 2009 Elsevier B. V. All rights reserved.
学科领域高分子化学
部门归属中国科学院化学研究所; 中国科学院上海有机化学研究所; 中国科学院研究生院
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收录类别SCI
语种英语
WOS记录号WOS:000275793300007
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被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sioc.ac.cn/handle/331003/28375
专题高分子材料研究室
通讯作者Li HX(李洪祥); Hu WP(胡文平)
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GB/T 7714
Wang CL,WEI ZHONGMING,Meng Q,et al. Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors[J]. Org. Electron.,2010,11(4):544-551.
APA 王成亮.,WEI ZHONGMING.,孟青.,赵华平.,XU WEI.,...&胡文平.(2010).Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors.Org. Electron.,11(4),544-551.
MLA 王成亮,et al."Dibenzo[b,d]thiophene based oligomers with carbon-carbon unsaturated bonds for high performance field-effect transistors".Org. Electron. 11.4(2010):544-551.
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