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学科主题: 高分子化学
题名: All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics
其他题名: 全溶液制备高性能的n-沟道有机晶体管和电路: 面向低成本的空气电子学
作者: Zhao Y(赵岩) ; Di ZA(狄重安) ; Gao XK(高希珂) ; Hu YB(胡云宾) ; Guo YL(郭云龙) ; Zhang L(张磊) ; Liu YQ(刘云圻) ; Wang JZ(王吉政) ; Hu WP(胡文平) ; Zhu DB(朱道本)
刊名: Adv. Mater.
发表日期: 2011
卷: 23, 期:21, 页:2448-2453
收录类别: SCI
部门归属: 中科院化学研究所; 中科院上海有机化学研究所
英文摘要: Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V(-1) s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.
语种: 英语
相关网址: 查看原文
WOS记录号: WOS:000291732000008
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内容类型: 期刊论文
URI标识: http://ir.sioc.ac.cn/handle/331003/27817
Appears in Collections:上海有机化学研究所_期刊论文

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Recommended Citation:
Zhao Y,Di ZA,Gao XK,et al. All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics[J]. Adv. Mater.,2011,23(21):2448-2453.
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